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IPI100P03P3L-04: MOSFET OPTIMOS-P TRNCH P-CH -30V -100A 4mOhms

IPI100P03P3L-04 Data Sheet

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Part Number:: IPI100P03P3L-04
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/12

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Recent History
What is this?

IPI100N04S3-03 evaluate
US $.85 - 1.49 / Piece

MOSFET OPTIMOS -T PWR-TRANS 40V 100A 2.5mOhms
IPI100N04S3-03M evaluate
US $.95 - 1.49 / Piece

MOSFET N-Channel 40V MOSFET
IPI100N04S4-H2 evaluate
US $.56 - 1.12 / Piece

MOSFET N-Channel 40V MOSFET

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 30 V
Gate-Source Breakdown Voltage :	- 16 V, + 5 V	Continuous Drain Current :	- 100 A
Resistance Drain-Source RDS (on) :	4 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 30 V
Package / Case : TO-262
Continuous Drain Current : - 100 A
Resistance Drain-Source RDS (on) : 4 m Ohms
Gate-Source Breakdown Voltage : - 16 V, + 5 V

Parameters:

Technical/Catalog Information	IPI100P03P3L-04
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	4.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	9300pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPI100P03P3L 04 IPI100P03P3L04

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IPI100P03P3L-04

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