MOSFET OptiMOS -T PWR TRANS 100V 100A
IPI100N10S3-05: MOSFET OptiMOS -T PWR TRANS 100V 100A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A |
Resistance Drain-Source RDS (on) : | 4.8 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Package / Case : | TO-262 |
Packaging : | Tube |
Technical/Catalog Information | IPI100N10S3-05 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 100A, 10V |
Input Capacitance (Ciss) @ Vds | 11570pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 176nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI100N10S3 05 IPI100N10S305 |