MOSFET OptiMOS-T PWR TRANS 55V 100A
IPI100N06S3L-04: MOSFET OptiMOS-T PWR TRANS 55V 100A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 3.5 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Technical/Catalog Information | IPI100N06S3L-04 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 17270pF @ 25V |
Power - Max | 214W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 362nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI100N06S3L 04 IPI100N06S3L04 IPI100N06S3L 04IN ND IPI100N06S3L04INND IPI100N06S3L-04IN |