IPI09N03LA

MOSFET N-KANAL POWER MOS

product image

IPI09N03LA Picture
SeekIC No. : 00163701 Detail

IPI09N03LA: MOSFET N-KANAL POWER MOS

floor Price/Ceiling Price

Part Number:
IPI09N03LA
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 15.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 15.5 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 50 A
TC=100 °C 46 A
Pulsed drain current ID,pulse TC=25 °C 350 A
Avalanche energy, single pulse EAS ID=77 A, RGS=25 Ω 75 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175 °C
6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 63 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPI09N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs9.2 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1642pF @ 15V
Power - Max63W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI09N03LA
IPI09N03LA



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Discrete Semiconductor Products
Isolators
LED Products
Static Control, ESD, Clean Room Products
Optoelectronics
Audio Products
View more