MOSFET N-KANAL POWER MOS
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 15.5 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 °C | 50 | A |
TC=100 °C | 46 | A | ||
Pulsed drain current | ID,pulse | TC=25 °C | 350 | A |
Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 75 | mJ |
Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 63 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | IPI09N03LA |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Rds On (Max) @ Id, Vgs | 9.2 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 1642pF @ 15V |
Power - Max | 63W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 13nC @ 5V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI09N03LA IPI09N03LA |