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IPI08CNE8NG

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...

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IPI08CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...

IPI08CNE8NG Data Sheet

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Part Number:
IPI08CNE8NG
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
I D
T C=25
95
A
T C=100
68
Pulsed drain current2)
I D,pulse
T C=25
380
Avalanche energy, single pulse
EAS
I D=95 A, RGS=25
262
mJ
Reverse diode dv /dt
dv /dt
I D=95 A, VDS=68 V,
di /dt =100 A/s,
T j,max=175
6
kV/s
Gate source voltage3)
VGS
±20
V
Power dissipation
Ptot
T C=25
167
W
Operating and storage temperature
T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
2) See figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V


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