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IPI08CN10N G

MOSFET N-CH 100V 95A

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SeekIC No. : 00164064 Detail

IPI08CN10N G: MOSFET N-CH 100V 95A

IPI08CN10N G Data Sheet

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Part Number:
IPI08CN10N G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 95 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.0085 Ohms
Continuous Drain Current : 95 A


Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 95 A
TC=100 °C 68

Pulsed drain current2)

 ID,pulse TC=25 °C 380
Avalanche energy, single pulse EAS ID =95 A, RGS=25 262 mJ
Reverse diode dv /dt dv/dt ID =95 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot TC=25 °C 167 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



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