IPF7103IPbF

      IPF7103IPbF has many features: 1.adavanced process technology; 2. ultra low on-resistance; 3.dual n-channel MOSFET; 4.surface mount; 5. available in Tape& reel; 6.dynamic dv/dt rating; 7. fast swithing; 8.lead-free.
the SO-8 has been modified through a customized leadframe for enhanced  thermal characteristics and dual-die capability making it ideal in a varity of power applications. With these improvements, mutiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor dissipation of greater than 0.8W is possible in a typical PCB mount application.
      Here are some absolute maximum ratings of IPF7103IPbF  here: 1. when TA=25C, continuous drain current is 3.0A; 2.when TA=70C, continuous drain current is 2.3A; 3.  pulsed drain current is 10A; 4. when TC=25C, power disspation is 2.0W; 5.linear derating factor is 0.016W/C; 6. gate-to-source voltage is -20Vand +20V; 7.peak diode recovery is 4.5; 7. junction and storage temperature ranges from -55 to +150C.
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