Features: Application IPF7103IPbF has many features: 1.adavanced process technology; 2. ultra low on-resistance; 3.dual n-channel MOSFET; 4.surface mount; 5. available in Tape& reel; 6.dynamic dv/dt rating; 7. fast swithing; 8.lead-free.the SO-8 has been modified through a customized leadframe...
IPF7103IPbF: Features: Application IPF7103IPbF has many features: 1.adavanced process technology; 2. ultra low on-resistance; 3.dual n-channel MOSFET; 4.surface mount; 5. available in Tape& reel; 6.dynamic d...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
IPF7103IPbF has many features: 1.adavanced process technology; 2. ultra low on-resistance; 3.dual n-channel MOSFET; 4.surface mount; 5. available in Tape& reel; 6.dynamic dv/dt rating; 7. fast swithing; 8.lead-free.
the SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a varity of power applications. With these improvements, mutiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor dissipation of greater than 0.8W is possible in a typical PCB mount application.
Here are some absolute maximum ratings of IPF7103IPbF here: 1. when TA=25C, continuous drain current is 3.0A; 2.when TA=70C, continuous drain current is 2.3A; 3. pulsed drain current is 10A; 4. when TC=25C, power disspation is 2.0W; 5.linear derating factor is 0.016W/C; 6. gate-to-source voltage is -20Vand +20V; 7.peak diode recovery is 4.5; 7. junction and storage temperature ranges from -55 to +150C.
If you want to know more about IPF7103IPbF, please pay attention to our websites!