IPF13N03LA

Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel, logic level• Excellent gate charge x RDS(on) product (FOM)• Superior thermal resistance• 175 °C operating temperatureSpecifications Par...

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SeekIC No. : 004375790 Detail

IPF13N03LA: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel, logic level• Excellent gate charge x RDS(on) product...

floor Price/Ceiling Price

Part Number:
IPF13N03LA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 30 A
TC=100 30
Pulsed drain current ID,pulse TC=25 3) 210
Avalanche energy, single pulse EAS ID=24 A, RGS=25 Ω 60 mJ
Reverse diode dv /dt dv /dt ID=30 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175
6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 46 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  
Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 30 A
TC=100 30
Pulsed drain current ID,pulse TC=25 3) 210
Avalanche energy, single pulse EAS ID=24 A, RGS=25 Ω 60 mJ
Reverse diode dv /dt dv /dt ID=30 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175
6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 46 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



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