IPDH6N03LAG

MOSFET N-CH 25V 50A TO252-3-11

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IPDH6N03LAG: MOSFET N-CH 25V 50A TO252-3-11

floor Price/Ceiling Price

US $ .34~.77 / Piece | Get Latest Price
Part Number:
IPDH6N03LAG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.77
  • $.69
  • $.61
  • $.55
  • $.48
  • $.43
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) @ Vgs: 19nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2390pF @ 15V
Power - Max: 71W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Cut Tape (CT)
Power - Max: 71W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TO252-3
Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
Gate Charge (Qg) @ Vgs: 19nC @ 5V
Input Capacitance (Ciss) @ Vds: 2390pF @ 15V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliant



Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=252)
50
A
TC=100
50
Pulsed drain current
ID,pulse
TC=253)
350
Avalanche energy, single pulse
EAS
ID=9.3 A, RGS=25
150
mJ
MOSFET dv /dt ruggedness
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175
6
kV/s
Gate source voltage4)
VGS
static
±20
V
Power dissipation
Ptot
TC=25
71
W
Operating and storage temperature
Tj, Tstg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56  



Parameters:

Technical/Catalog InformationIPDH6N03LAG
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs6 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 2390pF @ 15V
Power - Max71W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs19nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPDH6N03LAG
IPDH6N03LAG
IPDH6N03LAGINCT ND
IPDH6N03LAGINCTND
IPDH6N03LAGINCT



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