IPD90N03S4L-03, US $ .33-.61 , Infineon Technologies, IPD90N03S4L-03 DataSheet download, circuit diagram from SeekIC.com

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IPD90N03S4L-03: MOSFET OPTIMOS-T2 PWR-TRANS 30V 90A 3mOhms

IPD90N03S4L-03 Data Sheet

US $ .33~.61 / Piece | Get Latest Price

Part Number:: IPD90N03S4L-03
Mfg:: Infineon Technologies
Supply Ability:: 5000

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0~1
1~10
10~100
100~500

Unit Price
$.61
$.54
$.43
$.33

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Upload time: 2024/11/11

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Recent History
What is this?

IPD90N03S4L-02 evaluate
US $.29 - .38 / Piece

MOSFET OPTIMOS-T2 PWR-TRANS 30V 90A 2.2mOhms
IPD90N04S3-04 evaluate
US $.61 - 1.13 / Piece

MOSFET OPTIMOS -T PWR-TRANS 40V 90A 3.6mOhms
IPD90N04S3-H4 evaluate
US $.29 - .38 / Piece

MOSFET N-Channel 40V MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 16 V	Continuous Drain Current :	90 A
Resistance Drain-Source RDS (on) :	3 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 90 A
Package / Case : TO-252
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 3 m Ohms

Parameters:

Technical/Catalog Information	IPD90N03S4L-03
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	3 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	94W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD90N03S4L 03 IPD90N03S4L03

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IPD90N03S4L-03

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