MOSFET OptiMOS 2 PWR TRANST 100V 13A
IPD78CN10N G: MOSFET OptiMOS 2 PWR TRANST 100V 13A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 0.078 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 °C | 13 | A |
TC=100 °C | 9 | |||
Pulsed drain current2) |
ID,pulse | TC=25 °C | 52 | |
Avalanche energy, single pulse | EAS | ID =13 A, RGS=25 | 17 | mJ |
Reverse diode dv /dt | dv/dt | ID =13 A, VDS=80 V, di /dt =100 A/s, Tj,max=175 °C |
6 | kV/s |
Gate source voltage3) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 31 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |