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IPD60R385CP

MOSFET N-CH 600 V 9 A

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SeekIC No. : 00150173 Detail

IPD60R385CP: MOSFET N-CH 600 V 9 A

IPD60R385CP Data Sheet

floor Price/Ceiling Price

US $ 1.12~1.7 / Piece | Get Latest Price
Part Number:
IPD60R385CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.7
  • $1.54
  • $1.37
  • $1.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.385 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.385 Ohms


Features:

• Worldwide best R ds,on in TO252
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25
9.0
A
TC=100
5.7
Pulsed drain current2)
ID,pulse
TC=25
27
Avalanche energy, single pulse
EAS
ID=3.4A,VDD=50V
227
mJ
Avalanche energy, repetitive t AR2),3)
EAR
ID=3.4A,VDD=50V
0.3
Avalanche energy, repetitive t AR2),3)
IAR
3
A
MOSFET dv /dt ruggedness
dv /dt
VDS=0...480 V
50
V/µs
Gate source voltage
VGS
static
±20
V
AC (f >1 Hz)
±30
Power dissipation
Ptot
TC=25
83
W
Operating and storage temperature
Tj, Tstg
-55 ... 150




Parameters:

Technical/Catalog InformationIPD60R385CP
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs385 mOhm @ 5.2A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 100V
Power - Max83W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD60R385CP
IPD60R385CP
IPD60R385CPINCT ND
IPD60R385CPINCTND
IPD60R385CPINCT



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