MOSFET N-CH 600 V 9 A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 0.385 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=25 |
9.0 |
A |
TC=100 |
5.7 | |||
Pulsed drain current2) |
ID,pulse |
TC=25 |
27 | |
Avalanche energy, single pulse |
EAS |
ID=3.4A,VDD=50V |
227 |
mJ |
Avalanche energy, repetitive t AR2),3) |
EAR |
ID=3.4A,VDD=50V |
0.3 | |
Avalanche energy, repetitive t AR2),3) |
IAR |
3 |
A | |
MOSFET dv /dt ruggedness |
dv /dt |
VDS=0...480 V |
50 |
V/µs |
Gate source voltage |
VGS |
static |
±20 |
V |
AC (f >1 Hz) |
±30 | |||
Power dissipation |
Ptot |
TC=25 |
83 |
W |
Operating and storage temperature |
Tj, Tstg |
-55 ... 150 |
Technical/Catalog Information | IPD60R385CP |
Vendor | Infineon Technologies (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 9A |
Rds On (Max) @ Id, Vgs | 385 mOhm @ 5.2A, 10V |
Input Capacitance (Ciss) @ Vds | 790pF @ 100V |
Power - Max | 83W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 22nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPD60R385CP IPD60R385CP IPD60R385CPINCT ND IPD60R385CPINCTND IPD60R385CPINCT |