IPD5N03LAG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 50A
Power - Max: 83W
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO252-3
Input Capacitance (Ciss) @ Vds: 2653pF @ 15V
Vgs(th) (Max) @ Id: 2V @ 35µA


Parameters:

Technical/Catalog Information	IPD5N03LAG
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	5.2 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	2653pF @ 15V
Power - Max	83W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	22nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD5N03LAG IPD5N03LAG IPD5N03LAGINTR ND IPD5N03LAGINTRND IPD5N03LAGINTR