IPD50R399CP, US $ 1-1.31 , Infineon Technologies, IPD50R399CP DataSheet download, circuit diagram from SeekIC.com

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IPD50R399CP: MOSFET COOL MOS PWR TRANS 550V 0.399 Ohms

IPD50R399CP Data Sheet

US $ 1~1.31 / Piece | Get Latest Price

Part Number:: IPD50R399CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/21

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Recent History
What is this?

IPD50N03S2-07 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 7.3mOhm
IPD50N03S2L-06 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm
IPD50N03S4L-06 evaluate
US $.25 - .5 / Piece

MOSFET N-Channel 30V MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	550 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	9 A
Resistance Drain-Source RDS (on) :	0.399 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Package / Case : TO-252
Continuous Drain Current : 9 A
Drain-Source Breakdown Voltage : 550 V
Resistance Drain-Source RDS (on) : 0.399 Ohms

Parameters:

Technical/Catalog Information	IPD50R399CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	399 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	890pF @ 100V
Power - Max	83W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD50R399CP IPD50R399CP

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IPD50R399CP

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