IPD50P03P4L-11, US $ .21-.28 , Infineon Technologies, IPD50P03P4L-11 DataSheet download, circuit diagram from SeekIC.com

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IPD50P03P4L-11: MOSFET N-Channel enh MOSFET 30V

IPD50P03P4L-11 Data Sheet

US $ .21~.28 / Piece | Get Latest Price

Part Number:: IPD50P03P4L-11
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1550~2500
2500~5000
5000~10000

Unit Price
$.28
$.24
$.22
$.21

Processing time
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Upload time: 2024/11/12

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Recent History
What is this?

IPD50N03S2-07 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 7.3mOhm
IPD50N03S2L-06 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm
IPD50N03S4L-06 evaluate
US $.25 - .5 / Piece

MOSFET N-Channel 30V MOSFET

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	- 16 V, 5 V	Continuous Drain Current :	50 A
Resistance Drain-Source RDS (on) :	10.5 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Package / Case :	TO-252
Packaging :	Reel

Description

Mounting Style :
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Continuous Drain Current : 50 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 10.5 mOhms
Gate-Source Breakdown Voltage : - 16 V, 5 V

Parameters:

Technical/Catalog Information	IPD50P03P4L-11
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	3770pF @ 25V
Power - Max	58W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD50P03P4L 11 IPD50P03P4L11

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IPD50P03P4L-11

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