IPD50N06S2-14, US $ .46-.82 , Infineon Technologies, IPD50N06S2-14 DataSheet download, circuit diagram from SeekIC.com

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IPD50N06S2-14: MOSFET OPTIMOS PWR-TRANS N-CH 50V 50A

IPD50N06S2-14 Data Sheet

US $ .46~.82 / Piece | Get Latest Price

Part Number:: IPD50N06S2-14
Mfg:: Infineon Technologies
Supply Ability:: 5000

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0~1
1~10
10~100
100~500

Unit Price
$.82
$.74
$.59
$.46

Processing time
15 Days
15 Days
15 Days
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Upload time: 2024/11/12

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Recent History
What is this?

IPD50N03S2-07 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 7.3mOhm
IPD50N03S2L-06 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm
IPD50N03S4L-06 evaluate
US $.25 - .5 / Piece

MOSFET N-Channel 30V MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	50 A
Resistance Drain-Source RDS (on) :	14.4 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 14.4 m Ohms

Parameters:

Technical/Catalog Information	IPD50N06S2-14
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	14.4 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	1485pF @ 25V
Power - Max	136W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD50N06S2 14 IPD50N06S214

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IPD50N06S2-14

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