IPD50N04S3-08, US $ .4-.73 , Infineon Technologies, IPD50N04S3-08 DataSheet download, circuit diagram from SeekIC.com

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IPD50N04S3-08: MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 50A 7.5mOhm

IPD50N04S3-08 Data Sheet

US $ .4~.73 / Piece | Get Latest Price

Part Number:: IPD50N04S3-08
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$.73
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Upload time: 2024/11/12

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Recent History
What is this?

IPD50N03S2-07 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 7.3mOhm
IPD50N03S2L-06 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm
IPD50N03S4L-06 evaluate
US $.25 - .5 / Piece

MOSFET N-Channel 30V MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	50 A
Resistance Drain-Source RDS (on) :	8 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 50 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 8 m Ohms

Parameters:

Technical/Catalog Information	IPD50N04S3-08
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	2350pF @ 25V
Power - Max	68W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD50N04S3 08 IPD50N04S308

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IPD50N04S3-08

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