MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm
IPD30N08S2L-21: MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 20.5 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | IPD30N08S2L-21 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 20.5 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 1650pF @ 25V |
Power - Max | 136W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 72nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPD30N08S2L 21 IPD30N08S2L21 |