IPD30N06S2L-23, US $ .33-.6 , Infineon Technologies, IPD30N06S2L-23 DataSheet download, circuit diagram from SeekIC.com

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IPD30N06S2L-23: MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 23mOhms

IPD30N06S2L-23 Data Sheet

US $ .33~.6 / Piece | Get Latest Price

Part Number:: IPD30N06S2L-23
Mfg:: Infineon Technologies
Supply Ability:: 5000

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0~1
1~10
10~100
100~500

Unit Price
$.6
$.54
$.43
$.33

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15 Days
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Upload time: 2024/11/21

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Recent History
What is this?

IPD30N03S2L-10 evaluate
US $.17 - .23 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 10mOhms
IPD30N03S4L-14 evaluate
US $.2 - .4 / Piece

MOSFET OPTIMOS T2 N-CH 30V 30A 13.6mOhms
IPD30N06S2-15 evaluate
US $.51 - .72 / Piece

MOSFET N-CH 55V 30A

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	23 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 23 mOhms

Parameters:

Technical/Catalog Information	IPD30N06S2L-23
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	23 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	1091pF @ 25V
Power - Max	100W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD30N06S2L 23 IPD30N06S2L23

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IPD30N06S2L-23

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