Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...
IPD16CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...
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• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | T C=25 | 53 | A |
T C=100 | 38 | |||
Pulsed drain current2) | ID,pulse | T C=25 | 212 | |
Avalanche energy, single pulse | EAS | I D=53A, RGS=25 | 107 | mJ |
Reverse diode dv /dt | dv/dt | ID=53A, VDS=68V, di/dt =100 A/µs, Tj,max=175 |
6 | kV/µs |
Gate source voltage3) | VGS | ±20 | V | |
Power dissipation | Ptot | T C=25 | 100 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V