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IPD15N06S2L-64

MOSFET OPTIMOS PWR-TRANS N-CH 55V 19A

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SeekIC No. : 00163008 Detail

IPD15N06S2L-64: MOSFET OPTIMOS PWR-TRANS N-CH 55V 19A

IPD15N06S2L-64 Data Sheet

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Part Number:
IPD15N06S2L-64
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 64 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 15 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 64 m Ohms


Parameters:

Technical/Catalog InformationIPD15N06S2L-64
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs64 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 354pF @ 25V
Power - Max47W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD15N06S2L 64
IPD15N06S2L64



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