FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 10nC @ 10V
Power - Max: 31W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Cut Tape (CT)
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO252-3
Input Capacitance (Ciss) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 30A, 10V
Parameters: | Technical/Catalog Information | IPD135N03LG |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 15V |
| Power - Max | 31W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPD135N03LG
IPD135N03LG
IPD135N03LGINCT ND
IPD135N03LGINCTND
IPD135N03LGINCT
|
IPD135N03LG Data Sheet
