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IPD12CNE8NG

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...

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IPD12CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...

IPD12CNE8NG Data Sheet

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Part Number:
IPD12CNE8NG
Supply Ability:
5000

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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification




Specifications

Parameter

Symbol

Conditions

Value

Unit

Continuous drain current

ID

T C=25

67

A

T C=100

48

Pulsed drain current2)

ID,pulse

T C=25

268

Avalanche energy, single pulse

EAS

I D=67A, RGS=25

154

mJ

Reverse diode dv /dt

dv/dt

ID=67A, VDS=68V,
di/dt =100 A/µs,
Tj,max=175

6

kV/µs

Gate source voltage3)

VGS

 

±20

V

Power dissipation

Ptot

T C=25

125

W

Operating and storage temperature

Tj, Tstg

 

-55...175

IEC climatic category; DIN IEC 68-1

 

 

55/175/56

 


1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V




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