Position: Home  > All Categories> Integrated Circuits (ICs) > IPD12CNE8NG

IPD12CNE8NG

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...

product image

IPD12CNE8NG Picture
See larger image
SeekIC No. : 004375768 Detail

IPD12CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...

IPD12CNE8NG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPD12CNE8NG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/31

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification




Specifications

Parameter

Symbol

Conditions

Value

Unit

Continuous drain current

ID

T C=25

67

A

T C=100

48

Pulsed drain current2)

ID,pulse

T C=25

268

Avalanche energy, single pulse

EAS

I D=67A, RGS=25

154

mJ

Reverse diode dv /dt

dv/dt

ID=67A, VDS=68V,
di/dt =100 A/µs,
Tj,max=175

6

kV/µs

Gate source voltage3)

VGS

 

±20

V

Power dissipation

Ptot

T C=25

125

W

Operating and storage temperature

Tj, Tstg

 

-55...175

IEC climatic category; DIN IEC 68-1

 

 

55/175/56

 


1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Memory Cards, Modules
WT32
VTL5C7
Resistors
A101G
3006P-1-205LF
Isolators
HCPL062N
HCPL316J
Line Protection, Backups
BX0023
A20B-1008-0550
View more