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IPBH6N03LA G

MOSFET N-CH 25V 50A

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SeekIC No. : 00151750 Detail

IPBH6N03LA G: MOSFET N-CH 25V 50A

IPBH6N03LA G Data Sheet

floor Price/Ceiling Price

US $ .44~.97 / Piece | Get Latest Price
Part Number:
IPBH6N03LA G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • 500~1000
  • Unit Price
  • $.97
  • $.91
  • $.86
  • $.73
  • $.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 10.2 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 10.2 Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2) 50 A
T C=100 50
Pulsed drain current I D,pulse T C=25 3) 350
Avalanche energy, single pulse E AS I D=50 A, R GS=25 150 mJ
Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS   ±20 V
Power dissipation P tot T C=25 71 W
Operating and storage temperature T j, T stg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  
1) J-STD20 and JESD22


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