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IPB60R099CP

MOSFET COOL MOS PWR TRANS MAX 650V

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IPB60R099CP: MOSFET COOL MOS PWR TRANS MAX 650V

IPB60R099CP Data Sheet

floor Price/Ceiling Price

US $ 3.09~5 / Piece | Get Latest Price
Part Number:
IPB60R099CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

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  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $5
  • $4.1
  • $3.69
  • $3.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 0.099 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 31 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.099 Ohms


Features:

• Worldwide best R ds,on in TO263
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC 1) for target applications
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 °C 31 A
T C=100 °C 19
Pulsed drain current 2) I D,pulse T C=25 °C 93
Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 mJ
Avalanche energy, repetitive t AR
2),3)		 E AR I D=11 A, V DD=50 V 1.2
Avalanche current, repetitive t AR
2),3)		 I AR   11 A
MOSFET dv /dt ruggedness dv /dt V DS=0...480 V 50 V/ns
Gate source voltage V GS static ±20 V
AC (f >1 Hz) ±30
Power dissipation P tot T C=25 °C 255 W
Operating and storage temperature T j, T stg   -55 ... 150 °C



Parameters:

Technical/Catalog InformationIPB60R099CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs99 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 100V
Power - Max255W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB60R099CP
IPB60R099CP



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