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IPB50N10S3L-16

MOSFET OptiMOS-T PWR TRANS 100V 50A

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SeekIC No. : 00153353 Detail

IPB50N10S3L-16: MOSFET OptiMOS-T PWR TRANS 100V 50A

IPB50N10S3L-16 Data Sheet

floor Price/Ceiling Price

US $ .62~1 / Piece | Get Latest Price
Part Number:
IPB50N10S3L-16
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1
  • $.89
  • $.71
  • $.62
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0154 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 50 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.0154 Ohms


Parameters:

Technical/Catalog InformationIPB50N10S3L-16
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs15.4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 4180pF @ 25V
Power - Max100W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB50N10S3L 16
IPB50N10S3L16



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