IPB47N10S-33

MOSFET SIPMOS PWR-TRNSTR 100V 47A

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IPB47N10S-33: MOSFET SIPMOS PWR-TRNSTR 100V 47A

floor Price/Ceiling Price

US $ .41~.56 / Piece | Get Latest Price
Part Number:
IPB47N10S-33
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.56
  • $.46
  • $.43
  • $.41
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 33 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : TO-263
Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 33 m Ohms


Parameters:

Technical/Catalog InformationIPB47N10S-33
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C47A
Rds On (Max) @ Id, Vgs33 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max175W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB47N10S 33
IPB47N10S33



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