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IPB45N06S3-16

MOSFET N-CH 55V 45A

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SeekIC No. : 00163676 Detail

IPB45N06S3-16: MOSFET N-CH 55V 45A

IPB45N06S3-16 Data Sheet

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Part Number:
IPB45N06S3-16
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 15.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 15.7 m Ohms


Parameters:

Technical/Catalog InformationIPB45N06S3-16
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs15.4 mOhm @ 23A, 10V
Input Capacitance (Ciss) @ Vds 2980pF @ 25V
Power - Max65W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs57nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB45N06S3 16
IPB45N06S316
IPB45N06S3 16INCT ND
IPB45N06S316INCTND
IPB45N06S3-16INCT



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