MOSFET OptiMOS-T2 PWR TRANS 55V 25A
IPB25N06S3L-22: MOSFET OptiMOS-T2 PWR TRANS 55V 25A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 25 A | ||
Resistance Drain-Source RDS (on) : | 21.3 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current1) |
I D |
T C=25 , VGS=10 V |
25 |
A |
T C=100 , VGS=10 V2) |
25 | |||
Pulsed drain current2) |
I D,pulse |
T C=25 |
100 | |
Avalanche energy, single pulse3) |
EAS |
I D=12A |
60 |
mJ |
Drain gate voltage2) |
VDG |
55 |
V | |
Gate source voltage4) |
VGS |
±16 |
V | |
Power dissipation |
Ptot |
T C=25 |
50 |
W |
Operating and storage temperature |
T j, T stg |
-55 ... +175 |
||
IEC climatic category; DIN IEC 68-1 |
55/175/56 |
Technical/Catalog Information | IPB25N06S3L-22 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 25A |
Rds On (Max) @ Id, Vgs | 21.3 mOhm @ 17A, 10V |
Input Capacitance (Ciss) @ Vds | 2260pF @ 25V |
Power - Max | 50W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 47nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPB25N06S3L 22 IPB25N06S3L22 |