MOSFET OptiMOS-T2 PWR TRANS 55V 25A
IPB25N06S3-25: MOSFET OptiMOS-T2 PWR TRANS 55V 25A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 25 A | ||
Resistance Drain-Source RDS (on) : | 24.8 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=25, VGS=10V |
25 |
A |
TC=100,VGS=10V |
23 | |||
Pulsed drain current |
IDP |
TC=25 |
100 | |
Avalanche energy, single pulse |
EAS |
I D=12 A |
60 |
mJ |
Drain gate voltage |
VDG |
55 |
V | |
Gate source voltage |
VGS |
±20 |
V | |
Power dissipation |
Ptot |
TC=25 |
48 |
W |
Operating and storage temperature |
Tj,Tstg |
-55 ... +175 |
||
IEC climatic category; DIN IEC 68-1 |
55/175/56 |
Technical/Catalog Information | IPB25N06S3-25 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 25A |
Rds On (Max) @ Id, Vgs | 24.8 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1862pF @ 25V |
Power - Max | 48W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 41nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPB25N06S3 25 IPB25N06S325 |