Position: Home  > All Categories> Integrated Circuits (ICs) > IPB25N06S3-25

IPB25N06S3-25

MOSFET OptiMOS-T2 PWR TRANS 55V 25A

product image

IPB25N06S3-25 Picture
See larger image
SeekIC No. : 00162108 Detail

IPB25N06S3-25: MOSFET OptiMOS-T2 PWR TRANS 55V 25A

IPB25N06S3-25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPB25N06S3-25
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 24.8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 24.8 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 1C (HBM) EIA/JESD22-A114-B


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25, VGS=10V
25
A
TC=100,VGS=10V
23
Pulsed drain current
IDP
TC=25
100
Avalanche energy, single pulse
EAS
I D=12 A
60
mJ
Drain gate voltage
VDG
55
V
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
48
W
Operating and storage temperature
Tj,Tstg
-55 ... +175
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPB25N06S3-25
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs24.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1862pF @ 25V
Power - Max48W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB25N06S3 25
IPB25N06S325



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Tools
TCP202
G084SN05 V.3
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more