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IPB100N06S3L-04

MOSFET OptiMOS -T2 PWR TRAN 55V 100A

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SeekIC No. : 00161212 Detail

IPB100N06S3L-04: MOSFET OptiMOS -T2 PWR TRAN 55V 100A

IPB100N06S3L-04 Data Sheet

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Part Number:
IPB100N06S3L-04
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 3.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 3.5 m Ohms


Parameters:

Technical/Catalog InformationIPB100N06S3L-04
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs3.5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 17270pF @ 25V
Power - Max214W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs362nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB100N06S3L 04
IPB100N06S3L04
IPB100N06S3L 04INDKR ND
IPB100N06S3L04INDKRND
IPB100N06S3L-04INDKR



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