MOSFET OptiMOS-T2 PWR TRANS 55V 100A
IPB100N06S3-03: MOSFET OptiMOS-T2 PWR TRANS 55V 100A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 3 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current1) | ID | T C=25, VGS=10 V | 100 | A |
T C=100 , VGS=10 V2) |
100 | |||
Pulsed drain current2) | ID,pulse | TC=25 | 400 | |
Avalanche energy, single pulse3) | EAS | ID=50 A | 690 | mJ |
Drain gate voltage2) | VDG | 55 | V | |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 | 300 | W |
Operating and storage temperature | Tj, Tstg | -55 ... +175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | IPB100N06S3-03 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 21620pF @ 25V |
Power - Max | 300W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 480nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPB100N06S3 03 IPB100N06S303 |