MOSFET N-Channel MOSFET 20-200V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 15.1 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 2) | 50 | A |
TC=100 | 46 | |||
Pulsed drain current | ID,pulse | TC=253) | 350 | |
Avalanche energy, single pulse | EAS | ID=45 A, RGS=25 | 75 | mJ |
Reverse diode dv /dt | dv /dt | ID=50 A, VDS=20 V, di /dt =200 A/s, T j,max=175 |
6 | kV/s |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 | 63 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |