MOSFET N-Channel MOSFET 20-200V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 5.4 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | I D | T C=25 2) | 100 | A |
T C=100 | 100 | |||
Pulsed drain current3) | I D,pulse | T C=25 | 400 | |
Avalanche energy, single pulse | E AS | I D=100 A, R GS=25 | 826 | mJ |
Reverse diode dv /dt | dv /dt | I D=100 A, V DS=80 V, di /dt =100 A/s, T j,max=175 |
6 | kV/s |
Gate source voltage4) | V GS | ±20 | V | |
Power dissipation | P tot | T C=25 | 300 | W |
Operating and storage temperature | T j, T stg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |