Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• Superior thermal resistance• 175 operat...
IPB04N03LG: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) produ...
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Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=252) |
80 |
A |
TC=100 |
80 | |||
Pulsed drain current |
ID,pulse |
TC=253) |
385 | |
Avalanche energy, single pulse |
EAS |
ID=77A, RGS=25Ω |
290 |
mJ |
Reverse diode dv /dt |
dv /dt |
ID=80A, VDS=20V, di /dt =200 A/µs, Tj,max=175 |
6 |
kV/µs |
Gate source voltage4) |
VGS |
±20 |
V | |
Power dissipation |
Ptot |
TC=25 |
107 |
W |
Operating and storage temperature |
Tj, Tstg |
-55 ... 175 |
||
IEC climatic category; DIN IEC 68-1 55/ |
55/175/56 |