IPB04N03LAT

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Drain to Source Voltage (Vdss): 25V
Gate Charge (Qg) @ Vgs: 32nC @ 5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 107W
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO263-3
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 2V @ 60µA
Input Capacitance (Ciss) @ Vds: 3877pF @ 15V


Parameters:

Technical/Catalog Information	IPB04N03LAT
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds	3877pF @ 15V
Power - Max	107W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	32nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB04N03LAT IPB04N03LAT IPB04N03LAXTINDKR ND IPB04N03LAXTINDKRND IPB04N03LAXTINDKR