MOSFET 600V CoolMOS E6 Power Transistor
IPA60R190E6: MOSFET 600V CoolMOS E6 Power Transistor
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20.2 A | ||
Resistance Drain-Source RDS (on) : | 0.19 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220-FP-3 | Packaging : | Tube |