Features: • Simultaneous conduction lockout protection• UV lockoutPinoutSpecificationsHSD1/HSD2 Voltage (1 Suffix) ............600 V(2 Suffix) ............ 800 VHSD1/HSD2 Slew Rate ...............10 V/nsVDD Voltage .....................16.5 VLogic Input Voltage ............. -0.3V to 5...
INT200: Features: • Simultaneous conduction lockout protection• UV lockoutPinoutSpecificationsHSD1/HSD2 Voltage (1 Suffix) ............600 V(2 Suffix) ............ 800 VHSD1/HSD2 Slew Rate ........
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
HSD1/HSD2 Voltage (1 Suffix) ............600 V
(2 Suffix) ............ 800 V
HSD1/HSD2 Slew Rate ...............10 V/ns
VDD Voltage .....................16.5 V
Logic Input Voltage ............. -0.3V to 5.5 V
LS OUT Voltage ........... -0.3 V to VDD + 0.3 V
Storage Temperature ............65 to 125°C
Ambient Temperature .............-40 to 85°C
Junction Temperature ................ 150°C
Lead Temperature(2).................260°C
Power Dissipation
PF Suffix (TA = 25°C) ................ 1.25 W
(TA = 70°C) ............... 800 mW
TF Suffix (TA = 25°C).................1.04 W
(TA = 70°C) ............... 667 mW
Thermal Impedance (JA)
PF Suffix ...................... 100°C/W
TF Suffix ......................120°C/W
1. Unless noted, all voltages referenced to COM, TA = 25°C
2. 1/16" from case for 5 seconds.
The INT200 Low-side driver IC provides gate drive for an external low-side MOSFET switch and high-side level shifting. When used in conjunction with the INT201 high-side driver, the INT200 provides a simple, cost-effective interface between low-voltage control logic and high-voltage loads. The INT200 is designed to be used with rectified 110 V or 220 V supplies. Both high-side and low-side switches can be controlled independently from ground-referenced 5 V logic inputs on the low side driver.
Built-in protection logic of the INT200 prevents both switches from turning on at the same time and shorting the high voltage supply. Pulsed
level shifting saves power and provides enhanced noise immunity. The circuit is powered from a nominal 15 V supply to provide adequate gate drive for external N-channel MOSFETs.
Applications include motor drives, electronic ballasts, and uninterruptible power supplies. The INT200 can also be used to implement full- bridge and multi-phase configurations.
The INT200 is available in 8-pin plastic DIP and SOIC packages.