IN74HC651A

Features: `Outputs Directly Interface to CMOS, NMOS, and TTL `Operating Voltage Range: 2.0 to 6.0 V `Low Input Current: 1.0 A` High Noise Immunity Characteristic of CMOS Devices`Outputs Directly Interface to CMOS, NMOS, and TTL `Operating Voltage Range: 2.0 to 6.0 V `Low Input Current: 1.0 A` High...

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SeekIC No. : 004375110 Detail

IN74HC651A: Features: `Outputs Directly Interface to CMOS, NMOS, and TTL `Operating Voltage Range: 2.0 to 6.0 V `Low Input Current: 1.0 A` High Noise Immunity Characteristic of CMOS Devices`Outputs Directly Int...

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Part Number:
IN74HC651A
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

`Outputs Directly Interface to CMOS, NMOS, and TTL
`Operating Voltage Range: 2.0 to 6.0 V
`Low Input Current: 1.0 A
` High Noise Immunity Characteristic of CMOS Devices


`Outputs Directly Interface to CMOS, NMOS, and TTL
`Operating Voltage Range: 2.0 to 6.0 V
`Low Input Current: 1.0 A
` High Noise Immunity Characteristic of CMOS Devices







Pinout

  Connection Diagram

  Connection Diagram




Specifications

Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V
VIN DC Input Voltage (Referenced to GND) -1.5to VCC +1.5
V
VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5
V
IIN DC Input Current, per Pin ±20 mA
IOUT DC Output Sink/Source Current, per Pin ±35 mA
ICC DC Supply Current, V and GND Pins ±75 mA
PD Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg Storage Temperature -65 to +150
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260

*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/from 65 to 125
SOIC Package: : - 7 mW/ from 65 to 125



Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V
VIN DC Input Voltage (Referenced to GND) -1.5to VCC +1.5
V
VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5
V
IIN DC Input Current, per Pin ±20 mA
IOUT DC Output Sink/Source Current, per Pin ±35 mA
ICC DC Supply Current, V and GND Pins ±75 mA
PD Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg Storage Temperature -65 to +150
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260

*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/from 65 to 125
SOIC Package: : - 7 mW/ from 65 to 125








Description

The IN74HC651A is identical in pinout to the LS/ALS651. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.

These devices of the IN74HC651A consist of bus transceiver circuits, D-type flip-flop, and control circuitry arranged for multiplex ransmission of data directly from the data bus or from the internal storage registers. Direction and Output Enable are provided to ct the read-time or stored data function. Data on the A or B Data bus, or both, can be stored in the internal D flip-flops w-to-high transitions at the appropriate clock pins (A-to-B Clock or B-to-A Clock) regardless of the select or enable or able control pins. When A-to-B Source and B-to-A Source are in the real-time transfer mode, it is also possible to store data t using the internal D-type flip-flops by simulta-neously enabling Direction and Output Enable. In this configuration each t reinforces its input. Thus, when all other data sources to the two sets of bus lines are at high impedance, each set of s lines will remain at its last state.

The IN74HC651A has inverted outputs.






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