Features: ·Silicon Epitaxial Planar Diodes·Fast switching diode in case SOT-23, especially suited for automatic insertion.·This diode is also available in other case styles including: the DO-35 case with the type designation 1N4448, the Mini-MELF case with the type designation LL4448, and the SOD-...
IMBD4448: Features: ·Silicon Epitaxial Planar Diodes·Fast switching diode in case SOT-23, especially suited for automatic insertion.·This diode is also available in other case styles including: the DO-35 case...
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Features: • Silicon Epitaxial Planar Diodes• Fast switching diode in case SOT-23, espe...
Symbol | Value | Unit | |
Reverse Voltage | VR | 75 | V |
Peak Reverse Voltage | VRM | 100 | V |
Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C andf 50 Hz |
I0 | 1501) | mA |
Surge Forward Current at t < 1 s and Tj = 25 °C | IFSM | 500 | mA |
Power Dissipation at Tamb = 25 °C | Ptot |
3501) |
mW |
Junction Temperature | Tj | 150 | °C |
Storage Temperature Range | TS | 65 to +150 | °C |
1) Device on fiberglass substrate, see layout |