IMB6A

The IMB6A is designed as one kind of power management (dual digital transistors) that has three points of features:(1)both the DTA144E chip in a UMT or SMT package; (2)ideal for power switching circuits; (3)mounting cost and area can be cut in half. And the structure of this device is epitaxial planar type NPN/ PNP silicon transistor (built-in resistor type).

The absolute maximum ratings of the IMB6A can be summarized as:(1)supply voltage:-50 V;(2)input voltage:-40 V;(3)output current:50 mA;(4)junction temperature:150;(5)storage temperature:-55 to +150;(6)power dissipation (UMC4N):150 mW. And the electrical characteristics of this device can be summarized as:(1)input voltage:-0.5 V;(2)output voltage: -0.1 V;(3)input current: -0.18 mA;(4)output current:-0.5 uA;(5)DC current gain:68;(6)input resistance of the IMB6A: 32.9 to 61.1 k;(7)resistance ratio:0.8 to 1.2; (8)transition frequency: 250 MHz.

If you want to know more information such as the electrical characteristics about the IMB6A, please download the datasheet in www.seekic.com or www.chinaicmart.com.