Features: ·Internal RBE for high stability·Four available CTR categories per package type·BVCEO> 60 V·Standard DIP packages·Lead (Pb)-free component·Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECPinoutSpecifications PARAMETER TEST CONDITION PART SYMBOL VALUE ...
ILQ66: Features: ·Internal RBE for high stability·Four available CTR categories per package type·BVCEO> 60 V·Standard DIP packages·Lead (Pb)-free component·Component in accordance to RoHS 2002/95/EC and...
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Transistor Output Optocouplers Phototransistor Out Quad CTR > 40-80%
PARAMETER |
TEST CONDITION |
PART |
SYMBOL |
VALUE |
UNIT |
Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 |
VRM IF Pdiss |
6.0 60 100 1.33 |
V mA mW mW/ | ||
Power dissipation Derate from 25 |
Pdiss |
150 2.0 |
mW mW/ | ||
Isolation test voltage |
t = 1.0 s |
VISO |
5300 |
V RMS | |
Total package power dissipation |
IL66 ILD66 ILQ66 |
Ptot Ptot Ptot |
250 400 500 |
mW mW mW | |
Derate linearly from 25 |
IL66 ILD66 ILQ66 |
3.3 5.33 6.67 |
mW/ mW/ mW/ | ||
Creepage distance Clearance distance Comparative tracking index |
CTI |
7.0 7.0 175 |
mm mm | ||
Isolation resistance |
VIO=500V,Tamb=25 VIO=500V,Tamb=100 |
CIO CIO |
1012 1011 |
| |
Storage temperature Operating temperature Lead soldering time at 260 |
Tstg Tamb |
- 55 to + 125 - 55 to + 100 10 |
s |
Tamb = 25, unless otherwise specified Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
IL66, ILD66, and ILQ66 are optically coupled isolators employing gallium arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels.