ILQ621

Transistor Output Optocouplers Phototransistor Out Quad CTR >50%

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ILQ621 Picture
SeekIC No. : 0097867 Detail

ILQ621: Transistor Output Optocouplers Phototransistor Out Quad CTR >50%

floor Price/Ceiling Price

US $ 1.04~1.39 / Piece | Get Latest Price
Part Number:
ILQ621
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.39
  • $1.33
  • $1.16
  • $1.04
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 70 V
Maximum Collector Emitter Saturation Voltage : 0.4 V Isolation Voltage : 5300 Vrms
Current Transfer Ratio : 600 % Maximum Forward Diode Voltage : 1.3 V
Maximum Collector Current : 100 mA Maximum Power Dissipation : 500 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : PDIP-16 Packaging : Tube    

Description

Maximum Collector Emitter Saturation Voltage : 0.4 V
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Power Dissipation : 500 mW
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Forward Diode Voltage : 1.3 V
Current Transfer Ratio : 600 %
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Voltage : 70 V
Maximum Collector Current : 100 mA
Package / Case : PDIP-16


Features:

• Alternate Source to TLP621-2/-4 and TLP621GB-2/-4
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Isolation Test Voltage 5300 VRMS



Application

• UL File # E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
• BSI IEC60950 IEC60965
• FIMKO



Pinout

  Connection Diagram


Specifications

Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Parameter Test condition Symbol Value Unit
Reverse voltage   VR 6.0 V
Forward current   IF 60 mA mA
Surge current   IFSM 1.5 A
Power dissipation   Pdiss 100 mW
Derate from 25 °C     1.33 mW/°C



Description

The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ ILQ621GB is well suited for CMOS interfacing given the CTR CE sat of 30 % minimum at I F of 1.0 mA. High gain linear operation is guaranteed by a minimum CTR CE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR CE 50 % minimum at 5.0 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.




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