ILQ1615

T_amb = 25, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Reverse voltage V_R .............................6.0 V
Forward current I_F .............................60 mA
Surge current I_FSM ..............................1.5 A
Power dissipation P_diss ..................100 mW
Derate linearly from 25 .............1.0 mW/
Collector-emitter breakdown voltage B_VCEO .......70 V 
Emitter-collector breakdown voltage B_VECO....... 7.0 V
current I_C.......................... 50 mA
     t < 1.0 ms  I_C .............100 mA
Power dissipation Pdiss.................150 mW
Derate linearly from 25 °C........... 1.5 mW/

The ILD/Q1615 are multi-channel 110 rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. ILQ1615 are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 V_RMS.

The binned min./max. and linear CTR characteristics make ILQ1615 well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD/Q1615 can be used in medium speed data I/O and control systems.

The binned min./max. CTR ILQ1615 specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at I_F = 1.0 mA.