Transistor Output Optocouplers Phototransistor Out Dual CTR >20%
ILD211T: Transistor Output Optocouplers Phototransistor Out Dual CTR >20%
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Input Type : | DC | Maximum Collector Emitter Voltage : | 70 V | ||
Maximum Collector Emitter Saturation Voltage : | 0.4 V | Isolation Voltage : | 4000 Vrms | ||
Maximum Forward Diode Voltage : | 1.55 V | Maximum Power Dissipation : | 300 mW | ||
Maximum Operating Temperature : | + 100 C | Minimum Operating Temperature : | - 55 C | ||
Package / Case : | SOIC-8 | Packaging : | Reel |
Parameter | Test condition | Symbol | Value | Unit |
Peak reverse voltage | VR | 6.0 | V | |
Peak pulsed current | 1.0 µs, 300 pps | 1.0 | mA | |
Continuous forward current per channel |
30 | A | ||
Power dissipation | Pdiss | 50 | mW | |
Derate linearly from 25 °C | 0.66 | mW/°C |
The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes ILD211T ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.
A specified minimum and maximum CTR ILD211T allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.