Output Device
: PhotoTriac
Isolation Voltage
: 5300 Vrms
Packaging
: Tube
Features: • On-State Current, 300 mA
• Zero Voltage Crossing
• Blocking Voltage, 600 V
• Isolation Test Voltage from Double Molded Package, 5300 VACRMS
• High Input Sensitivity IFT=2 mA, PF=1.0 IFT=5 mA, PF1.0
• High Static dv/dt 10,000 V/s
• Inverse Parallel SCRs Provide Commutating dv/dt>10K V/s
• Very Low Leakage<10A
• Small 6-Pin DIP Package
• Underwriters Lab File #E52744
• VDE Approval #0884 (Optional with Option 1, Add -X001 Suffix)Pinout
SpecificationsReverse Voltage ..................................6 V
Forward Current.............................60 mA
Surge Current .................................. 2.5 A
Thermal Resistance .................. 750°C/W
Power Dissipation ....................... 100 mW
Derate from 25°C ...............1.33 mW/°CDescriptionThe IL410 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction.
High input sensitivity of the IL410 is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC).
The IL410 uses two discrete SCRs resulting in a commutating dV/dt greater than 10KV/ms. The use of a proprietary dv/dt clamp results in a static dV/dt of greater than 10KV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.
The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The Pchannel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver.
The 600V blocking voltage permits of the IL410 control of off-line voltages up to 240VAC, with a safety factor of more than two, and is sufficient for as much as 380VAC.
The IL410 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
Applications include solid-state relays of the IL410, industrial controls, office equipment, and consumer appliances.
IL410 Data Sheet
