Features: • High Current Output Stage: 1.0 A Source/2.0 A Sink• Protection Circuits for Both Conventional and Sense IGBTs• Programmable Fault Blanking Time• Protection against Overcurrent and Short Circuit• Undervoltage Lockout Optimized for IGBT's• Negative Gat...
IL33153: Features: • High Current Output Stage: 1.0 A Source/2.0 A Sink• Protection Circuits for Both Conventional and Sense IGBTs• Programmable Fault Blanking Time• Protection agains...
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Rating | Symbol | Value | Unit |
Power Supply Voltage VCC to VEE Kelvin Ground to VEE (Note 1 ) |
VCC-VEE KGnd - VEE |
VEE-O,3 to VCC | V |
Logic Input | Vin | VEE-O,3 to VCC | V |
Current Sense Input | VS | -0.3 to Vcc | V |
Blanking/Desaturation Input | VBD | -0.3 to Vcc | V |
Gate Drive Output Source Current Sink Current Diode Clamp Current |
IO | 1.0 2.0 1.0 |
A |
Fault Output Source Current Sink Curent |
IFO | 0.56 180 1.0 100 |
mA |
Power Dissipation and Thermal Characteristics D Suffix SO-8 Package, Case 751 Maximum Power Dissipation @ TA = 5O°C Thermal Resistance, Junction-to-Air P Suffix DIP-8 Package, Case 626 Maximum Power Dissipation @ TA = 5O°C Thermal Resistance, Junction-to-Air |
PD RJA PD RJA |
0.56 180 1.0 100 |
mW °C/W mW 0C/W |
Operating Junction Temperature | TJ | +150 | °C |
Operating Ambient Temperature | TA | -40 to +105 | °C |
Storage Temperature | Tstg | -65 to +150 | °C |
The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices of the IL33153 are available in dualinline and surface mount packages and include the following features: