IL222AT

Current Transfer Ratio :
Minimum Operating Temperature : - 55 C
Packaging : Reel
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Maximum Collector Emitter Saturation Voltage : 1 V
Maximum Collector Current : 100 mA
Package / Case : SOIC-8 Narrow
Isolation Voltage : 4000 Vrms
Maximum Power Dissipation : 240 mW


Features:

• High Current Transfer Ratio, I_F=1 mA,
• IL221AT, 100% Minimum
• IL222AT, 200% Minimum
• IL223AT, 500% Minimum
• Withstand Test Voltage, 2500 VACRMS
• Electrical Specifications Similar to Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• Underwriters Lab File #E52744 (Code Letter P)




Specifications

Peak Reverse Voltage...................................... 6.0 V
Continuous Forward Current ..........................60 mA
Power Dissipation at 25°C ...........................90 mW
Derate Linearly from 25°C ...................1.2 mW/°C




Description

The IL222AT is a high current transfer ratio (CTR) optocoupler with a Gallium Arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector.

This IL222AT has a CTR tested at an 1 mA LED current. This low drive current permits easy interfacing from CMOS to LSTTL or TTL.

This optocoupler of the IL222AT is constructed in a standard SOIC-8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.