IL217AT

Minimum Operating Temperature : - 55 C
Packaging : Reel
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Maximum Collector Current : 100 mA
Maximum Collector Emitter Saturation Voltage : 400 mV
Package / Case : SOIC-8 Narrow
Isolation Voltage : 4000 Vrms
Current Transfer Ratio : 130 % (Typ)
Maximum Power Dissipation : 240 mW


Features:

• High Current Transfer Ratio, I_F=1 mA
• IL215AT, 20% Minimum
• IL216AT, 50% Minimum
• IL217AT, 100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• Underwriters Lab File #E52744 (Code Letter P)




Specifications

Peak Reverse Voltage.......................................6.0 V
Continuous Forward Current ..........................60 mA
Power Dissipation at 25°C ...........................90 mW
Derate Linearly from 25°C ...................1.2 mW/°C




Description

The IL217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating throughholes requirements, this package conforms to standards for surface mounted devices.

The high CTR at low input current of the IL217AT is designed for low power consumption requirements such as CMOS microprocessor interfaces.