Maximum Collector Emitter Saturation Voltage
: 0.4 V
Minimum Operating Temperature
: - 55 C
Maximum Forward Diode Voltage
: 1.5 V
Packaging
: Tube
Maximum Operating Temperature
: + 100 C
Input Type
: DC
Maximum Collector Emitter Voltage
: 30 V
Maximum Collector Current
: 100 mA
Package / Case
: SOIC-8 Narrow
Current Transfer Ratio
: 130 %
Isolation Voltage
: 4000 Vrms
Maximum Power Dissipation
: 240 mW
Features: • High Current Transfer Ratio IL211AT-20% Minimum IL212AT-50% Minimum IL213AT-100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• Underwriters Lab File #E52744 (Code Letter P)SpecificationsPeak Reverse Voltage .......................................6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................90 mW
Derate Linearly from 25°C .....................1.2 mW/°CDescriptionThe IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.
A choice of 20, 50, and 100% minimum CTR at IF=10 mA of the IL213AT makes these optocouplers suitable for a variety of different applications.
IL213AT Data Sheet
